Seoul National University has developed cloth RRAM (Resistive Random-Access Memory) technology and it will not require any electricity and can be worn as normal cloth

Seoul National University has developed cloth that is woven with RRAM (Resistive Random-Access Memory) technology and it will not require any electricity and can be worn as normal cloth
Professor Hwang Cheol Seong of the Department of Materials Science and Engineering and his research team recently invented a type of cloth that is woven with RRAM (Resistive Random-Access Memory) technology. The new memory cloth does not use any electricity and will be able to be worn like normal clothing. The professor and his team used a thread covered in aluminum and carbon fiber to develop a material that can be woven into cloth.
RRAM is a form of technology that stores information using ions as opposed to electrons to detect changes in electrical resistance. When the resistance is low, the technology functions as an insulator and stores data. Conversely, if the resistance is high, electricity is allowed to flow through and the material becomes a conductor. Through this method, information that is transmitted a single time is recorded and no additional supply of information is needed to maintain the information already obtained.

Professor HWANG Cheol Seong

Resistive random-access memory (RRAM or ReRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor. This technology bears some similarities to conductive-bridging RAM (CBRAM), and phase-change memory (PCM).

Normally, a dielectric material does not conduct electric current. In fact, dielectric substances are employed in capacitors for the specific purpose of preventing the flow of current and maintaining separation of electric charge poles. If a sample of dielectric material is subjected to a high enough voltage, it will suddenly conduct because of a phenomenon called dielectric breakdown. In a conventional dielectric material, breakdown causes permanent damage and failure of the associated component. In a memristor, the dielectric breakdown is temporary and reversible.

In the memristor, a deliberately applied voltage causes the medium to acquire microscopic conductive paths called filaments. The filaments appear as a result of various phenomena such as metal migration or physical defects. Once a filament appears, it can be broken or reversed by the application of a different external voltage. The controlled formation and destruction of filaments in large numbers allows for storage of digital data. Numerous substances have been tested for memristor characteristics, including nickel oxide, titanium dioxide, various electrolytes, semiconductor materials, and even some organic compounds.

Professor Hwang’s invention comes with many advantages. Unlike other electronic fabrics, which are encumbered by wires, the RRAM cloth is unobtrusive and can be worn and washed like ordinary clothing. This cloth also has low production costs and can be produced in large quantities like ordinary fabric.

Leave a Reply

Your email address will not be published. Required fields are marked *